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SPECIFICATION
Device Name Type Name Spec. No.
: : :
IGBT Module
(RoHS compliant product)
6MBI35U4A-120-50 MS5F06818
Feb. 23 '07
S.Ogawa
T.Miyasaka
Feb. 23 '07 S.Igarashi K.Yamada
MS5F06818
1 14
a
H04-004-07b
Revised
Date Classification Ind. Content
Records
Applied date Issued date Drawn Checked Checked Approved
Feb -23-'07 Enactment
S.Igarashi
K.Yamada T.Miyasaka
May.-15-'07
Revision
a
Revised Electrical characteristics. (P4/14)
H.Endo
S.Igarashi
K.Yamada
T.Miyasaka
MS5F06818
2 14
a
H04-004-06b
6MBI35U4A-120-50 (RoHS compliant product)
1. Outline Drawing ( Unit : mm )
2. Equivalent circuit
[ Inverter ]
[ Thermistor ]
25,2 6
15,1 6
17
18
1 2 U 23,24 3 4 27,2 8
5 6 V 21,22 7 8
9 10 W 19,20 11 12 13,1 4
MS5F06818
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H04-004-03a
3.Absolute Maximum Ratings ( at Tc= 25C unless other wise specified )
Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Continuous 1ms Tc=25C Tc=80C Tc=25C Tc=80C Conditions Maximum Ratings 1200 20 50 35 100 70 35 70 205 150 -40 ~ +125 AC : 1min. 2500 3.5 W C VAC Nm A Units V V
Inverter
Collector current
Icp -Ic -Ic pulse
1ms 1 device
Collector Power Dissipation Junction temperature Storage temperature Isolation between terminal and copper base (*1) voltage between thermistor and others (*2) Screw Torque Mounting (*3)
Pc Tj Tstg Viso -
(*1) All terminals should be connected together when isolation test will be done. (*2) Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. (*3) Recommendable Value : 2.5~3.5 Nm (M5)
4. Electrical char acteristics ( at Tj= 25C unless other wise specified)
Items
Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage
Symbols
ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr R B
Conditions
VGE = 0V VCE = 1200V VCE = 0V VGE=20V VCE = 20V Ic = 35mA VGE=15V Ic = 35A Tj= 25C Tj=125C Tj= 25C Tj=125C
min.
5.5 -
Char acter istics typ. max.
6.5 2.05 2.25 1.90 2.10 2.65 0.32 0.18 0.03 0.39 0.14 1.75 1.85 1.60 1.70 5000 495 3375
a
Units
mA nA V
1.0 200 7.1 2.20 2.05 1.20 0.60 1.00 0.30 2.05 1.85 0.35 520 3450
V
Inverter
Input capacitance Turn-on time
VCE=10V,VGE=0V,f=1MHz Vcc = 600V Ic = 35A VGE=15V Rg = 33 Tj= 25C Tj=125C Tj= 25C Tj=125C
nF
s
Turn-off time
VGE=0V IF = 35A IF = 35A T = 25C T =100C T = 25/50C
465 3305
Forward on voltage
V
Reverse recovery time
Thermistor
s K
Resistance B value
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5. Ther mal r esistance char acter istics Items
Thermal resistance(1device) Contact Thermal resistance (1device) (*4)
Symbols
Rth(j-c) Rth(c-f)
Conditions
Inverter IGBT Inverter FWD with Thermal Compound
Char acter istics min. typ. max.
0.05 0.60 0.88 -
Units
C/W
(*4) This is the value which is defined mounting on the additional cooling fin with thermal compound.
6. Indication on module Display on the module label - Logo of production - Type neme: 6MBI35U4A-120-50 - IC, VCES rating: 35A 1200V - Lot No (5 digits) - Place of manufacturing (code) - Bar code 7. Applicable categor y
This specification is applied to Power Integrated Module named 6MBI35U4A-120-50.
8. Stor age and tr anspor tation notes
* The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% . Be careful to solderability of the terminals if the module has passed over one year from manufacturing date, under the above storage condition. * Store modules in a place with few temperature changes in order to avoid condensation on the module surface. * Avoid exposure to corrosive gases and dust. * Avoid excessive external force on the module. * Store modules with unprocessed terminals. * Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time

90%
0V
L
0V V GE trr Irr
90%

VCE
Vcc
Ic
90%
RG V GE
V CE Ic
0V 0A
tr(i) tr ton toff

Ic
10%
10%
VCE tf
10%
10. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box
MS5F06818
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11. List of mater ials
(Total weight of soldering material(typ.): 4.4g)
No. 1 Base Plate 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Terminal Cover Case Isolation substrate IGBT chip Wiring Silicone Gel Adhesive Solder(Under chip) Solder (Under Isolation substrate ) Label FWD chip Ring Thermistor Parts Material (main) Ref. Cu Ni plating Ni plating (Internal) Cu Lead free solder plating (External) PPS resin UL 94V-0 PPS resin UL 94V-0 Al2O3 + Cu Silicon Aluminum Silicone resin Silicone resin Sn/Ag base (Not drawn in above) Sn/Ag base Paper Silicon Fe Lead glass (Not drawn in above) (Not drawn in above) Trivalent Chromate treatment
12. RoHS Dir ective Compliance
IGBTRoHSMS5F6209 MS5F6212 The document (MS5F6209) about RoHS that Fuji Electric Device Technology issued is applied to this IGBT Module. The Japanese Edition (MS5F6212) is made into a reference grade.
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13. Reliability test results
Reliability Test Items
Test categories Test items 1 Terminal Strength (Pull test) 2 Mounting Strength Pull force Test time Screw torque Test time Test methods and conditions : : : : 20N 101 sec. 2.5 ~ 3.5 Nm (M5) 101 sec. Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 5 (0:1) (0:1)
(Aug.-2001 edition)
Test Method 401 Method Test Method 402 method Test Method 403 Reference 1 Condition code B
3 Vibration
4 Shock
5 Solderabitlity
6 Resistance to Soldering Heat
1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor
Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 5000m/s2 Pulse width : 1.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Solder temp. : 2455 Immersion time : 50.5sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Solder temp. : 2605 Immersion time : 101sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Storage temp. : 1255 Test duration : 1000hr. Storage temp. : -405 Test duration : 1000hr. Storage temp. : 852 Relative humidity : 855% Test duration : 1000hr. Test temp. : 1202 Test humidity : 855% Test duration : 96hr. Test temp. : Low temp. -405 High temp. 125 5 RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles : High temp. 100
+0 -5
5
(0:1)
Mechanical Tests
Test Method 404 Condition code B
5
(0:1)
Test Method 303 Condition code A
5
(0:1)
Test Method 302 Condition code A
5
(0:1)
Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105
5 5 5
(0:1) (0:1) (0:1)
5
(0:1)
Environment Tests
5 Temperature Cycle
5
(0:1)
Dwell time Number of cycles 6 Thermal Shock Test temp.
Low temp. 0 Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles
+5 -0
Test Method 307 method Condition code A
5
(0:1)
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Reliability Test Items
Test categories Test items 1 High temperature Reverse Bias Test methods and conditions Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 (0:1)
(Aug.-2001 edition)
Test Method 101
Test temp. Bias Voltage Bias Method
Endurance Tests Endurance Tests
Test duration 2 High temperature Bias (for gate) Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity Bias Voltage Bias Method Test duration ON time OFF time Test temp. Number of cycles
: Ta = 1255 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr.
Test Method 101
5
(0:1)
: Ta = 1255 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. : : : : : : : : : 852 C 855% VC = 0.8xVCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=1005 deg Tj 150 , Ta=255 15000 cycles
o
Test Method 102 Condition code C
5
(0:1)
4 Intermitted Operating Life (Power cycle) ( for IGBT )
Test Method 106
5
(0:1)
Failure Criteria
Item Characteristic Symbol Failure criteria Unit Lower limit Upper limit LSLx0.8 USLx2 USLx2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 mA A mA V V mV mV Note
Electrical Leakage current ICES characteristic IGES Gate threshold voltage VGE(th) Saturation voltage VCE(sat) Forward voltage VF Thermal IGBT VGE resistance or VCE FWD VF Visual inspection Isolation voltage Visual inspection Peeling Plating and the others Viso -
Broken insulation The visual sample
LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement.
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Reliability Test Results
Test categories Reference norms EIAJ ED-4701
(Aug.-2001 edition)
Test items
Number Number of test of failure sample sample 5 5 5 5 5 5 5 5 5 5 5 5 0 0 0 0 0 0 0 0 0 0 0 0
1 Terminal Strength (Pull test) 2 Mounting Strength
Test Method 401 Method Test Method 402 method
Mechanical Tests
3 Vibration 4 Shock 5 Solderabitlity 6 Resistance to Soldering Heat 1 High Temperature Storage 2 Low Temperature Storage
Test Method 403 Condition code B Test Method 404 Condition code B Test Method 303 Condition code A Test Method 302 Condition code A Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105 Test Method 307 method Condition code A Test Method 101 Test Method 101 Test Method 102 Condition code C Test Method 106
Environment Tests
3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor 5 Temperature Cycle 6 Thermal Shock
1 High temperature Reverse Bias
5 5 5 5
0 0 0 0
Endurance Tests
2 High temperature Bias ( for gate ) 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycling) ( for IGBT )
MS5F06818
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[ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip
80 VGE=20V 15V 12V 80
[ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip
VGE=20V 15V 60 12V
Collector current : Ic [A]
10V 40
Collector current : Ic [A]
60
40
10V
20 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
20 8V
0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
[ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip
80 Tj=25C Tj=125C 10
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [A]
60
8
6
40
4 Ic=70A Ic=35A Ic=17.5A
20
2
0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
0 5 10 15 20 25 Gate-Emitter voltage : VGE [V]
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C
Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ]
10.0
[ Inverter ] Dynamic Gate charge (typ.) Vcc=600V Ic=35ATj= 25C
Capacitance : Cies, Coes, Cres [ nF ]
Cies
1.0
VGE
Cres
Coes 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V]
0
0 50
VCE 100 150 200
Gate charge : Qg [nC]
MS5F06818
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[ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=33, Tj= 25C
10000 10000
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=33, Tj=125C
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
1000 toff ton 100 tr tf
1000
toff tf ton
100
tr
10 0 20 40 60 Collector current : Ic [A]
10 0 20 40 60 Collector current : Ic [A]
[ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=35A, VGE=15V, Tj= 25C
Switching loss : Eon, Eoff, Err [mJ/pulse ]
10000 6 5 4 3 2 1 0 100.0 Gate resistance : Rg [] 1000.0 0 10 20
[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=33
Switching time : ton, tr, toff, tf [ nsec ]
1000 tr
ton toff
Eon(125C) Eoff(125C) Err(125C) Eon(25C) Eoff(25C) Err(25C)
100
tf
10 10.0
30
40
50
60
70
Collector current : Ic [A]
[ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=35A, VGE=15V, Tj= 125C
Switching loss : Eon, Eoff, Err [mJ/pulse ]
15 80
[ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 33 ,Tj <= 125C
10
Eon
Collector current : Ic [A]
1000.0
60
40
5
Eoff Err
20
0 10.0
0 100.0 Gate resistance : Rg [] 0 400 800 1200 Collector-Emitter voltage : VCE [V]
MS5F06818
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[ Inverter ] Forward current vs. Forward on voltage (typ.) chip
80 1000
[ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=33
Tj=25C
Tj=125C
Forward current : IF [A]
60
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
trr (125C) 100 trr (25C) Irr (125C) Irr (25C)
40
20
0 0 1 2 3 Forward on voltage : VF [V]
10 0 10 20 30 40 50 60 Forward current : IF [A]
Transient thermal resistance (max.)
10.000
Thermal resistanse : Rth(j-c) [ C/W ]
1.000
FW D[Inverter]
IGBT[Inverter]
0.100
0.010 0.001
0.010
0.100
1.000
Pulse width : Pw [sec]
[ Thermistor ] Temperature characteristic (typ.)
100
Resistance : R [k]
10
1
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Temperature [C ]
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Warnings
- This product shall be used within its absolute maximum rating (voltage, current, and temperature).This product may be broken in case of using beyond the ratings. If Printed Circuit Board is not suitable, the main pin terminals may have higher temperature than Tstg. Also the pin terminals shall be used within Tstg. Tstg Tstg - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. - Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary. (No.: MT5F12959)Tj Tc(Tc) - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. - Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. 100mm100um10um - In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) () - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOARBSOA
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W a rn in g s
If ex cessiv e static e le ctricity is app lied to the con tro l te rm ina ls, th e d ev ices m ay be bro ken. Im plem en t som e coun term ea sures against static e le ctricity. Nev er ad d the excessiv e m echanical stre ss to the m a in or control term inals whe n the prod uct is app lied to equipm ents. T he m o dule structure m ay be broken. In case of insufficien t -V G E, erroneo us tu rn-on of IG BT m ay o ccu r. -V G E sh all be se t enough v a lue to p rev en t this m alfunction . (Recom m en ded v alue : -V GE = -1 5V) -VG E -V G E : -V G E = -15V) In case of higher turn-on d v /d t of IG B T , erro neous turn -on of oppo site arm IG B T m ay occur. U se th is p rodu ct in the m ost suita ble driv e conditio ns, such as +V G E , -VG E , RG to prev ent the m a lfunction. dv/dt +V G E, -V G E, RG Th is p roduct m ay be broken by av alanche in case of VC E beyo nd m ax im um ra ting VC ES is ap plie d be tween C-E term inals. U se this produ ct within its absolute m axim um v olta ge. VC ES VC E Lowe r + V G E decrease IG B T saturation curren t. + V G E sh all be set m ore or eq ual than 15V in case of m a xim um collector current to be 50A (2 tim es of Ic rating). If + VG E is less tha n 15 V, the prod uct m ay not b e ab le to flow 50A of colle cto r current. IG B T 2 (50A ) 15V 15V 50A Incase of soldering this produ ct at e xcessiv e he at con dition, the package of this prod uct m ay be deteriora ted. P lease handle with care for soldering process.
-
-
-
-
-
-
Cautions
Fuji Electric Dev ice Technology is constantly making ev ery endeav or to improv e the product quality and reliability. Howev er, semiconductor products may rarely happen to fail or malfunction. To prev ent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-prev entiv e design, and malfunction-protective design. The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. W hen you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems,please apply after confirmation of this product to be satisfied about system construction and required reliability.
-
-
If there is any unclear matter in this specification, please contact Fuji Electric Dev ice Technology Co.,Ltd.
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